A plane sapphire wafers have a uniform dielectric constant and highly insulating characteristic, so they are generally used for hybrid microelectronic applications. This orientation can also be used for the growth of high superconductors.

For example, TlBaCaCuO (TbBaCaCuO), Tl-2212, the hetero-epitaxial superconducting thin film is grown on an optical sapphire cerium oxide (CeO2) composite substrate. The availability of Angstrom level surface finishes allows for fine line interconnects of hybrid modules.

Specifications of A-Plane (11-20) Sapphire Wafers

Item 2-inch A-plane(11-20) 430μm Sapphire Wafers

Crystal Materials 99,999%, High Purity, Monocrystalline Al2O3

Grade Prime, Epi-Ready

Surface Orientation A-plane(11-20)

Diameter 50.8 mm +/- 0.1 mm

Thickness 430 μm +/- 25 μm

Primary Flat Orientation C-plane(0001) +/- 0.2°

Primary Flat Length 16.0 mm +/- 1.0 mm

Single Side Polished Front Surface Epi-polished, Ra < 0.5 nm (by AFM)

(SSP) Back Surface Fine ground, Ra = 0.8 μm to 1.2 μm

Double Side Polished Front Surface Epi-polished, Ra < 0.5 nm (by AFM)

(DSP) Back Surface Epi-polished, Ra < 0.5 nm (by AFM)

TTV < 10 μm

BOW < 10 μm

WARP < 10 μm

Cleaning / Packaging Class 100 cleanroom cleaning and vacuum packaging,

25 pieces in one cassette packaging or single piece packaging.

Note: Custom sapphire wafers and substrates with any orientation and any thickness can be provided.

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