Features Of FDMC86520L

Max rDS(on) = 7.9 mΩ at VGS = 10 V, ID = 13.5 A

Max rDS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A

Low Profile - 1 mm max in Power 33

100% UIL Tested

RoHS Compliant

General Description of FDMC86520L

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. lt has been optimized for low gate charge, low rDS(on, fast switching speed and body diode reverse recovery performance.

Applications of FDMC86520L

Primary Switch in isolated DC-DC

Synchronous Rectifier

Load Switch

MOSFET Maximum Ratings of FDMC86520L

TA=25℃ unless otherwise noted

Thermal Characteristics

Electrical Characteristics of FDMC86520L

TJ=25℃ unless otherwise noted

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

NOTES:

1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material RθJC is guaranteed by design while RθCA is determined by the user's board design.

2. PulseTest: Pulse Width