ALD Precursor

Atomic Layer Deposition (ALD) is a thin-film deposition technique used in nanofabrication. It involves the sequential introduction of gaseous precursors into a reaction chamber, where they react on a substrate surface to form a conformal, uniform coating. ALD is known for its precise control over film thickness and composition, enabling the creation of ultra-thin layers with atomic-level precision. It's widely used in various industries, including electronics, optics, and energy storage, for applications like semiconductor manufacturing and solar cell production.

ALD Precursors Types

Hafnium (HF)

Tetrakis(diethylamino)hafnium (IV)

Platinum (Pt)

Tantalum (Ta)

Indium (In)

Ytterbium (Yb)

Yttrium (Y)

Samarium (Sm)

Germanium (Ge)

Gallium (Ga)

Iridium (Ir)

Ruthenium (Ru)

Zirconium (Zr)

Gadolinium (Gd)

Dysprosium (Dy)

Erbium (Er)

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